Manufacturer Part Number
BYW80-200G
Manufacturer
onsemi
Introduction
High-speed, high-power silicon rectifier diode
Suitable for use in high-frequency switching power supplies and converters
Product Features and Performance
Optimized for high-frequency, high-power applications
Fast reverse recovery time of 35 ns
Low forward voltage drop of 1.25 V at 22 A
High reverse voltage capability of 200 V
High average rectified current of 8 A
Product Advantages
Efficient power conversion
Compact and reliable design
Suitable for a wide range of applications
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 200 V
Current Average Rectified (Io): 8 A
Reverse Recovery Time (trr): 35 ns
Voltage Forward (Vf) (Max) @ If: 1.25 V @ 22 A
Current Reverse Leakage @ Vr: 10 A @ 200 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-65°C to 175°C)
Compatibility
Through-hole mounting (TO-220-2 package)
Application Areas
High-frequency switching power supplies
Power converters
Industrial and commercial electronics
Product Lifecycle
This product is an active and commonly used part in the market.
Replacement or upgrade options are available from onsemi and other manufacturers.
Key Reasons to Choose This Product
Optimized for high-frequency, high-power applications
Fast reverse recovery time for efficient power conversion
Low forward voltage drop for reduced power losses
High reverse voltage capability for versatile applications
High average rectified current rating
