BSS84LT1G - onsemi

Manufacturer Part Number

BSS84LT1G

Manufacturer

onsemi

Introduction

The BSS84LT1G is a P-channel enhancement-mode MOSFET transistor from onsemi, designed for low-power switching and amplifier applications.

Product Features and Performance

P-channel enhancement-mode MOSFET

Drain to Source Voltage (Vdss) of 50V

Maximum Gate-Source Voltage (Vgs) of ±20V

Low On-Resistance (Rds(on)) of 10Ω @ 100mA, 5V

Continuous Drain Current (Id) of 130mA at 25°C

Input Capacitance (Ciss) of 30pF @ 5V

Power Dissipation (Ptot) of 225mW at 25°C

Product Advantages

Low on-resistance for efficient power switching

Wide operating voltage range

Small footprint in SOT-23-3 package

Suitable for low-power applications

Key Technical Parameters

MOSFET Technology: P-Channel Enhancement-Mode

Vdss: 50V

Vgs (Max): ±20V

Rds(on) (Max): 10Ω @ 100mA, 5V

Id (Continuous): 130mA @ 25°C

Ciss (Max): 30pF @ 5V

Power Dissipation: 225mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with standard SOT-23-3 (TO-236) footprint

Application Areas

Low-power switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

This product is still in active production and availability is good.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent low-resistance performance for efficient power switching

Wide operating voltage range for versatile applications

Small and compact SOT-23-3 package for space-constrained designs

Suitable for a variety of low-power electronic applications

RoHS3 compliance for environmentally-friendly use

Proven reliability and quality from onsemi