BSS138-G - onsemi

Manufacturer Part Number

BSS138-G

Manufacturer

onsemi

Introduction

N-channel MOSFET transistor

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 50V

Gate-to-Source Voltage (Vgs) range of ±20V

On-state Resistance (Rds(on)) of 3.5Ω @ 220mA, 10V

Continuous Drain Current (Id) of 220mA @ 25°C

Input Capacitance (Ciss) of 27pF @ 25V

Power Dissipation (Pd) of 360mW @ 25°C

Operating Temperature range of -55°C to 150°C

Product Advantages

Low on-state resistance

High input impedance

Fast switching speed

Wide operating temperature range

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Threshold Voltage (Vgs(th)) of 1.5V @ 1mA

Gate Charge (Qg) of 2.4nC @ 10V

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Package: SOT-23-3 (TO-236)

Supplier Device Package: SOT-23-3 (TO-236)

Packaging: Tape & Reel (TR)

Application Areas

Switching circuits

Amplifier circuits

Power management applications

Product Lifecycle

Currently in production

Replacements and upgrades available

Key Reasons to Choose

Low on-state resistance for efficient power switching

Wide operating voltage and temperature range

Small surface mount package for compact designs

RoHS compliance for use in modern electronics