Manufacturer Part Number
BS170-D26Z
Manufacturer
onsemi
Introduction
The BS170-D26Z is a N-channel enhancement mode field-effect transistor (FET) suitable for general purpose switching and amplifier applications.
Product Features and Performance
N-Channel MOSFET with a drain-source voltage (Vdss) of 60V
Low on-resistance (Rds(on)) of 5Ω at 200mA, 10V
Continuous drain current (Id) of 500mA at 25°C
Input capacitance (Ciss) of 40pF at 10V
Power dissipation (Pd) of 830mW at 25°C
Product Advantages
Robust and reliable construction
Suitable for a wide range of switching and amplifier applications
Low on-resistance for efficient power handling
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5Ω @ 200mA, 10V
Drain Current (Id): 500mA @ 25°C
Input Capacitance (Ciss): 40pF @ 10V
Power Dissipation (Pd): 830mW @ 25°C
Quality and Safety Features
ROHS3 compliant
Reliable and rugged TO-92-3 package
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General purpose switching and amplifier applications
Power supply and control circuits
Industrial and consumer electronics
Product Lifecycle
The BS170-D26Z is an active product and currently available
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Robust and reliable performance
Wide operating temperature range
Low on-resistance for efficient power handling
Suitable for a variety of switching and amplifier applications
ROHS3 compliant for environmental safety