BF720T1G - onsemi

Manufacturer Part Number

BF720T1G

Manufacturer

onsemi

Introduction

High-voltage NPN bipolar junction transistor (BJT)

Suitable for general-purpose amplifier and switching applications

Product Features and Performance

High collector-emitter breakdown voltage (BVCEO) of 300V

Low collector-emitter saturation voltage (VCE(sat))

High current gain (hFE) of 50 minimum

High transition frequency (fT) of 60MHz

Product Advantages

Suitable for high-voltage, high-power applications

Excellent electrical characteristics for amplifier and switching circuits

Compact surface-mount package for high-density PCB design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 300V

Collector Current (IC): 100mA

Power Dissipation (PD): 1.5W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable performance under wide temperature range

Compatibility

Suitable for various high-voltage, high-power applications such as power supplies, motor drives, and industrial controls

Application Areas

General-purpose amplifier and switching circuits

Power supplies

Motor drives

Industrial controls

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgraded products may become available in the future as technology advances

Several Key Reasons to Choose This Product

High-voltage capability for demanding applications

Compact surface-mount package for space-constrained designs

Excellent electrical characteristics for efficient amplifier and switching circuits

Reliable performance across a wide temperature range

RoHS3 compliance for environmentally-friendly applications