BD681STU - onsemi

Manufacturer Part Number

BD681STU

Manufacturer

onsemi

Introduction

This is a bipolar junction transistor (BJT) from onsemi, designed for power amplifier and switching applications.

Product Features and Performance

Rated for up to 40W of power

Collector-emitter breakdown voltage of up to 100V

Collector current rating of up to 4A

High current gain of at least 750 at 1.5A collector current

Low collector-emitter saturation voltage of max 2.5V at 30mA, 1.5A

Product Advantages

Robust and reliable power handling capability

High current gain for efficient power amplification

Low saturation voltage for low power dissipation

Key Technical Parameters

Power Rating: 40W

Collector-Emitter Breakdown Voltage: 100V

Collector Current (Max): 4A

DC Current Gain: 750 minimum

Collector-Emitter Saturation Voltage: 2.5V maximum

Quality and Safety Features

RoHS3 compliant

Thermally efficient TO-126-3 package

Compatibility

Through-hole mounting

Compatible with various power amplifier and switching applications

Application Areas

Power amplifiers

Switching circuits

Motor controls

Industrial electronics

Product Lifecycle

This product is an active, standard part from onsemi. Replacement or upgraded options may become available in the future.

Key Reasons to Choose

Robust power handling

High current gain for efficient amplification

Low saturation voltage for low power dissipation

RoHS compliance for environmental responsibility