Manufacturer Part Number
BD13716STU
Manufacturer
onsemi
Introduction
High power NPN bipolar junction transistor
Product Features and Performance
High power rating of 1.25W
Capable of handling up to 60V collector-emitter voltage
Maximum collector current of 1.5A
Low collector-emitter saturation voltage of 500mV @ 50mA, 500mA
High DC current gain of 100 @ 150mA, 2V
Product Advantages
Suitable for high current, high voltage applications
Reliable operation due to robust design
Efficient power handling capability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 60V
Current Collector (Ic) (Max): 1.5A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Quality and Safety Features
RoHS3 compliant
TO-126-3 package for reliable performance
Compatibility
Suitable for a wide range of high power, high voltage electronic applications
Application Areas
Power amplifiers
Motor drivers
Switching regulators
Industrial control systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability
Low saturation voltage for efficient operation
Robust and reliable design
Suitable for a wide range of high-power, high-voltage applications