Manufacturer Part Number
BCX17LT1G
Manufacturer
onsemi
Introduction
The BCX17LT1G is a high-performance, high-gain PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
Product Features and Performance
High current handling capability up to 500 mA
Low collector-emitter saturation voltage (VCE(sat)) of 620 mV at 50 mA, 500 mA
Wide collector-emitter breakdown voltage up to 45 V
Operating temperature range from -55°C to 150°C
High DC current gain (hFE) of 100 or more at 100 mA, 1 V
Product Advantages
Excellent performance for amplifier and switching applications
Compact and space-saving surface mount package
Reliable and robust design for harsh environments
RoHS3 compliant for environmentally-friendly use
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45 V
Collector Current (IC): 500 mA
Collector Cutoff Current (ICBO): 100 nA
DC Current Gain (hFE): 100 or more at 100 mA, 1 V
Collector-Emitter Saturation Voltage (VCE(sat)): 620 mV at 50 mA, 500 mA
Quality and Safety Features
RoHS3 compliant for restricted use of hazardous substances
Reliable and robust design for long-term performance
Suitable for harsh environmental conditions
Compatibility
Compatible with a wide range of electronic circuits and systems
Suitable for various amplifier and switching applications
Application Areas
General-purpose amplifier and switching circuits
Audio amplifiers
Switch-mode power supplies
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance and reliability for amplifier and switching applications
Wide operating temperature range and high breakdown voltage for harsh environments
Compact and space-saving surface mount package for efficient design
RoHS3 compliance for environmentally-friendly use
Availability of replacement or upgrade options for long-term support