BCP69T1G - onsemi

Manufacturer Part Number

BCP69T1G

Manufacturer

onsemi

Introduction

The BCP69T1G is a PNP bipolar junction transistor (BJT) in a SOT-223 (TO-261) package.

Product Features and Performance

Operates over a wide temperature range of -65°C to 150°C

Supports a maximum collector current of 1A

Provides a collector-emitter breakdown voltage of up to 20V

Offers a typical DC current gain (hFE) of 85 at 500mA, 1V

Achieves a transition frequency of 60MHz

Product Advantages

Compact surface mount package

Excellent thermal management

Robust and reliable performance

Suitable for a variety of applications

Key Technical Parameters

Power Rating: 1.5W

Collector-Emitter Breakdown Voltage: 20V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 10A

VCE Saturation Voltage: 500mV @ 100mA, 1A

DC Current Gain (hFE): 85 (Min) @ 500mA, 1V

Transition Frequency: 60MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for surface mount applications

Compatible with standard SOT-223 (TO-261) sockets and PCB footprints

Application Areas

Amplifier circuits

Switching circuits

Audio and power electronics

General-purpose electronic applications

Product Lifecycle

This product is currently in active production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Wide operating temperature range

High power handling capability

Excellent electrical performance

Compact and space-saving surface mount package

RoHS3 compliance for environmental safety

Reliable and durable construction for long-term use