BCP56-10T1G - onsemi

Manufacturer Part Number

BCP56-10T1G

Manufacturer

onsemi

Introduction

The BCP56-10T1G is a high-performance NPN bipolar junction transistor (BJT) suitable for a variety of applications.

Product Features and Performance

High power handling capability of up to 1.5W

High collector-emitter breakdown voltage of 80V

High collector current rating of up to 1A

High current gain (hFE) of at least 63 at 150mA, 2V

High transition frequency of 130MHz

Wide operating temperature range of -65°C to 150°C

Product Advantages

Excellent power handling and voltage capabilities

High current carrying capacity

Fast switching and high-frequency performance

Reliable operation across a wide temperature range

Key Technical Parameters

Power Rating: 1.5W

Collector-Emitter Breakdown Voltage: 80V

Collector Current (Max): 1A

Current Gain (hFE): Minimum 63 @ 150mA, 2V

Transition Frequency: 130MHz

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

Packaged in a reliable and durable SOT-223 (TO-261) surface mount package

Compatibility

Compatible with standard surface mount soldering processes

Application Areas

Power amplifiers

Switching circuits

Audio amplifiers

Radio frequency (RF) circuits

Industrial and automotive electronics

Product Lifecycle

This product is an active and widely available component.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Excellent power handling capability for high-performance applications

Wide operating voltage and temperature range for reliable operation

Fast switching and high-frequency performance for RF and switching circuits

RoHS3 compliance for use in modern electronics