Manufacturer Part Number
BC858BLT1G
Manufacturer
onsemi
Introduction
The BC858BLT1G is a Bipolar Junction Transistor (BJT) from onsemi, a leading global semiconductor manufacturer. It is a single PNP transistor designed for general-purpose applications.
Product Features and Performance
High frequency operation up to 100 MHz
Low collector-emitter saturation voltage (VCEsat) of 650 mV at 5 mA, 100 mA
Wide operating temperature range of -55°C to 150°C
Low collector cutoff current (ICBO) of 15 nA
High DC current gain (hFE) of 220 minimum at 2 mA, 5 V
Product Advantages
Reliable and consistent performance
Suitable for various electronic circuit designs
Compact surface mount package (SOT-23-3)
RoHS3 compliant for environmental sustainability
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 30 V
Collector Current (IC): 100 mA
Power Dissipation: 300 mW
Transition Frequency (fT): 100 MHz
Quality and Safety Features
Compliant with RoHS3 directive for hazardous substance restrictions
Reliable and stable performance in a wide temperature range
Compatibility
Suitable for general-purpose electronic circuits and amplifier applications
Application Areas
Analog and digital circuits
Amplifiers
Switches
Inverters
Voltage regulators
Product Lifecycle
The BC858BLT1G is an active and readily available product from onsemi.
Replacement or upgrade options may be available, but the product is not currently nearing discontinuation.
Key Reasons to Choose This Product
High-performance PNP transistor with excellent frequency response and low saturation voltage
Compact and reliable surface mount package
Wide operating temperature range for diverse applications
RoHS3 compliance for environmental responsibility
Consistent and stable performance from a trusted manufacturer, onsemi