BC857BLT1G - onsemi

Manufacturer Part Number

BC857BLT1G

Manufacturer

onsemi

Introduction

Low-power, general-purpose PNP bipolar junction transistor

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 300 mW

Maximum collector-emitter breakdown voltage: 45 V

Maximum collector current: 100 mA

Maximum collector cutoff current: 15 nA

Maximum collector-emitter saturation voltage: 650 mV @ 5 mA, 100 mA

Minimum DC current gain: 220 @ 2 mA, 5 V

Transition frequency: 100 MHz

Product Advantages

Small footprint in SOT-23-3 package

High-temperature operation

Low collector cutoff current

Low collector-emitter saturation voltage

Good current gain and high-frequency performance

Key Technical Parameters

Bipolar junction transistor type: PNP

Package: SOT-23-3 (TO-236)

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with various electronic circuits and systems requiring a small-signal PNP transistor

Application Areas

General-purpose amplifier and switching applications

Low-power analog and digital circuits

Product Lifecycle

Currently available, no discontinuation information

Several Key Reasons to Choose This Product

Compact and space-saving SOT-23-3 package

Wide operating temperature range

Low collector cutoff current and saturation voltage

Good current gain and high-frequency performance

RoHS3 compliance for environmental and safety considerations