BC856BWT1G - onsemi

Manufacturer Part Number

BC856BWT1G

Manufacturer

onsemi

Introduction

The BC856BWT1G is a PNP bipolar junction transistor (BJT) from onsemi, suitable for various electronic circuit applications.

Product Features and Performance

PNP bipolar junction transistor

Frequency transition up to 100MHz

Collector-emitter breakdown voltage up to 65V

Collector current up to 100mA

Collector-emitter saturation voltage as low as 650mV

DC current gain (hFE) of at least 220

Product Advantages

Suitable for high-speed and high-frequency applications

Compact surface mount package (SC-70, SOT-323)

Reliable performance across a wide temperature range (-55°C to 150°C)

RoHS3 compliant

Key Technical Parameters

Package: SC-70, SOT-323

Power rating: 150mW

Operating temperature range: -55°C to 150°C

Collector-emitter breakdown voltage: 65V

Collector current: 100mA

Collector-emitter saturation voltage: 650mV

DC current gain (hFE): Minimum 220

Quality and Safety Features

RoHS3 compliant

Reliable performance across wide temperature range

Robust packaging for surface mount applications

Compatibility

The BC856BWT1G is a direct replacement or upgrade for various PNP bipolar junction transistors in electronic circuits.

Application Areas

Amplifier circuits

Switching circuits

Logic gates

Voltage regulators

Power supplies

Audio applications

Product Lifecycle

The BC856BWT1G is an actively supported product by onsemi and is not nearing discontinuation. Replacement or upgraded versions may become available in the future.

Key Reasons to Choose This Product

High-frequency performance up to 100MHz

High voltage and current handling capabilities

Low saturation voltage for efficient operation

Compact surface mount packaging for space-constrained designs

Reliable performance over a wide temperature range

RoHS3 compliance for environmentally-friendly applications

Direct replacement or upgrade potential for various PNP BJT applications