BC850BLT1G - onsemi

Manufacturer Part Number

BC850BLT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), NPN type

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 225 mW

Collector-Emitter Breakdown Voltage: 45V (max)

Collector Current (max): 100 mA

Collector Cutoff Current (max): 15 nA

Collector-Emitter Saturation Voltage: 600 mV @ 5 mA, 100 mA

DC Current Gain (hFE): 200 min @ 2 mA, 5V

Transition Frequency: 100 MHz

Product Advantages

Suitable for a wide range of applications due to its performance characteristics

Compact and space-saving surface mount package

Key Technical Parameters

Transistor Type: NPN

Package: SOT-23-3 (TO-236)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Widely compatible with various electronic circuits and systems

Application Areas

Suitable for use in amplifiers, switches, logic gates, and other analog and digital circuits

Product Lifecycle

This product is currently available and actively supported by the manufacturer

Replacement or upgrade options may be available, but specific information is not provided

Key Reasons to Choose This Product

Excellent electrical performance characteristics, including high current handling, low saturation voltage, and high transition frequency

Compact and space-saving surface mount package

RoHS compliance for environmental responsibility

Broad compatibility and suitability for a wide range of applications