BC849CLT1G - onsemi

Manufacturer Part Number

BC849CLT1G

Manufacturer

onsemi

Introduction

The BC849CLT1G is a small-signal NPN bipolar junction transistor from onsemi. It is suitable for a wide range of general-purpose amplifier and switching applications.

Product Features and Performance

Optimized for low-noise, high-gain performance

High transition frequency of 100 MHz

Low collector-emitter saturation voltage of 600 mV @ 5 mA, 100 mA

Collector current (Ic) up to 100 mA

Collector-emitter breakdown voltage (VCEO) up to 30 V

Operating temperature range of -55°C to 150°C

Product Advantages

Excellent high-frequency performance

Low power consumption

Compact and space-efficient SOT-23-3 package

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30 V

Collector Current (Ic): 100 mA

DC Current Gain (hFE): 420 (min) @ 2 mA, 5 V

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Audio and radio frequency (RF) circuits

Switching regulators and power supplies

Logic and control circuits

Product Lifecycle

This product is still in active production and widely available.

Replacement or upgrade options may be available from onsemi or other semiconductor manufacturers.

Several Key Reasons to Choose This Product

Excellent high-frequency performance for a wide range of applications

Low power consumption and compact SOT-23-3 package for space-efficient designs

Reliable and durable construction with RoHS3 compliance

Suitable for a variety of electronic circuits and systems

Readily available and actively supported by the manufacturer