BC849BLT1G - onsemi

Manufacturer Part Number

BC849BLT1G

Manufacturer

onsemi

Introduction

The BC849BLT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications.

Product Features and Performance

Low collector-emitter saturation voltage (Vce(sat))

High current gain (hFE)

High operating frequency up to 100 MHz

Compact SOT-23-3 (TO-236) surface-mount package

Suitable for analog and digital circuits

Product Advantages

Excellent electrical characteristics

Compact and space-saving package

Reliable performance in a wide range of operating temperatures

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 15 nA

DC Current Gain (hFE): 200 min @ 2 mA, 5 V

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in extreme temperatures (-55°C to 150°C)

Compatibility

Suitable for a wide range of analog and digital circuit designs

Application Areas

General-purpose amplifier and switching applications

Audio and video circuits

Power supplies

Industrial control systems

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options are available from onsemi.

Key Reasons to Choose This Product

Excellent electrical characteristics, including low Vce(sat) and high hFE

High operating frequency for high-speed applications

Compact and space-saving SOT-23-3 package

Reliable performance in a wide range of operating temperatures

RoHS3 compliance for environmental sustainability