BC848BLT3G - onsemi

Manufacturer Part Number

BC848BLT3G

Manufacturer

onsemi

Introduction

Bipolar junction transistor (BJT) in the NPN configuration

Designed for general-purpose amplifier and switching applications

Product Features and Performance

Low-noise, high-gain performance

Wide range of operating voltage and current

High transition frequency of 100 MHz

Low collector-emitter saturation voltage of 600 mV

Product Advantages

Efficient and reliable performance

Compact surface-mount packaging

Suitable for various electronic circuit designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 15 nA

DC Current Gain (hFE): 200 (min)

Power Dissipation: 300 mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Widely used in various electronic devices and circuits

Application Areas

General-purpose amplifiers

Switching circuits

Logic gates

Voltage regulators

Audio and radio frequency (RF) applications

Product Lifecycle

Currently in production

Replacement parts and upgrades available

Several Key Reasons to Choose This Product

High-performance and reliable NPN bipolar transistor

Versatile applications in electronic circuit design

Compact surface-mount package for efficient integration

Complies with RoHS3 standards for environmental responsibility

Readily available and supported by the manufacturer