BC848ALT1G - onsemi

Manufacturer Part Number

BC848ALT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Packaging

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage (Max): 30 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 15 nA (ICBO)

Collector-Emitter Saturation Voltage (Max): 600 mV @ 5 mA, 100 mA

DC Current Gain (hFE) (Min): 110 @ 2 mA, 5 V

Transition Frequency: 100 MHz

Product Advantages

Compact Surface Mount Package

Wide Operating Temperature Range

High Collector Current Capability

Low Collector Cutoff Current

Good Saturation Voltage Characteristics

High DC Current Gain

Key Technical Parameters

Transistor Type: NPN

Packaging: SOT-23-3 (TO-236), Tape & Reel

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and systems requiring a general-purpose NPN bipolar transistor

Application Areas

Amplifiers

Switches

Drivers

Logic Gates

General-purpose signal processing circuits

Product Lifecycle

The BC848ALT1G is an active and widely available product. Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Compact and space-efficient surface mount package

Broad operating temperature range for versatile applications

High collector current capability for driving larger loads

Low collector cutoff current for improved circuit performance

Excellent saturation voltage characteristics for efficient operation

High DC current gain for enhanced amplification and switching