BC846BWT1G - onsemi

Manufacturer Part Number

BC846BWT1G

Manufacturer

onsemi

Introduction

The BC846BWT1G is a small-signal NPN bipolar junction transistor (BJT) designed for general-purpose applications.

Product Features and Performance

Surface-mount package (SC-70, SOT-323)

Low collector-emitter saturation voltage

High DC current gain (hFE)

High transition frequency (fT)

Wide operating temperature range (-55°C to 150°C)

Low collector-base and collector-emitter leakage currents

Product Advantages

Compact size for space-constrained designs

Excellent electrical characteristics for reliable performance

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 65V

Collector Current (Max): 100mA

Collector Cutoff Current: 15nA

DC Current Gain (hFE): 200 (min) @ 2mA, 5V

Transition Frequency (fT): 100MHz

Quality and Safety Features

RoHS3 compliant

Environmentally friendly and lead-free

Compatibility

Compatible with a variety of electronic circuit designs and applications

Application Areas

General-purpose amplifier and switching circuits

Biasing and pull-up/pull-down circuits

Low-power digital and analog circuits

Product Lifecycle

This product is currently in production and available for purchase.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Compact and space-saving surface-mount package

Excellent electrical performance characteristics

Wide operating temperature range for versatile applications

RoHS3 compliance for environmentally friendly use

Reliable and robust design for long-lasting performance