Manufacturer Part Number
BC81725MTF
Manufacturer
onsemi
Introduction
This product is a bipolar junction transistor (BJT) from onsemi, a leading manufacturer of semiconductor devices.
Product Features and Performance
Designed for high-frequency, high-current switching and amplification applications
Capable of operating at temperatures up to 150°C
Provides a maximum power dissipation of 310 mW
Offers a high collector-emitter breakdown voltage of 45 V
Supports a maximum collector current of 800 mA
Exhibits a low collector-emitter saturation voltage of 700 mV @ 50 mA, 500 mA
Achieves a high DC current gain of 160 @ 100 mA, 1 V
Operates at a transition frequency of 100 MHz
Product Advantages
Excellent high-frequency performance
Robust thermal capabilities
High voltage and current handling
Compact surface-mount package
Key Technical Parameters
Package: SOT-23-3
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 800 mA
Current Collector Cutoff (Max): 100 nA
Vce Saturation (Max) @ Ib, Ic: 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100 mA, 1 V
Frequency Transition: 100 MHz
Quality and Safety Features
Manufactured to high-quality standards by onsemi
Designed to operate safely within specified parameters
Compatibility
Suitable for a wide range of high-frequency, high-current switching and amplification applications
Application Areas
Ideal for use in RF power amplifiers, switching circuits, and other high-performance electronic applications
Product Lifecycle
This product is an active and readily available part from onsemi, with no plans for discontinuation or replacement at this time.
Several Key Reasons to Choose This Product
Excellent high-frequency performance for demanding applications
Robust thermal capabilities for high-temperature operation
Compact surface-mount packaging for efficient board design
High voltage and current handling capabilities
Reliable and high-quality manufacturing from a leading semiconductor supplier