BC817-25LT1G - onsemi

Manufacturer Part Number

BC817-25LT1G

Manufacturer

onsemi

Introduction

The BC817-25LT1G is a small-signal NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Designed for general-purpose amplifier and switching applications

Wide operating temperature range of -65°C to 150°C

Low collector-emitter saturation voltage of 700 mV at 50 mA, 500 mA

High DC current gain of 160 minimum at 100 mA, 1 V

Transition frequency of 100 MHz

Product Advantages

Small and space-efficient SOT-23-3 (TO-236) surface-mount package

Robust design for reliable performance in a variety of applications

Suitable for high-frequency and high-speed circuit designs

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

DC Current Gain (Min): 160 @ 100 mA, 1 V

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Meets industrial quality and safety standards

Compatibility

Can be used as a replacement or upgrade for similar NPN bipolar transistors in general-purpose amplifier and switching circuits

Application Areas

General-purpose amplifier and switching applications

High-frequency and high-speed circuit designs

Consumer electronics, industrial controls, and telecommunications equipment

Product Lifecycle

Currently in production, with no plans for discontinuation

Replacement and upgrade options available from onsemi and other manufacturers

Several Key Reasons to Choose This Product

Compact and space-efficient SOT-23-3 (TO-236) package

Robust design for reliable performance in a variety of applications

High DC current gain and transition frequency for high-speed and high-frequency applications

RoHS3 compliance for environmental responsibility

Availability of replacement and upgrade options