BC808-25LT1G - onsemi

Manufacturer Part Number

BC808-25LT1G

Manufacturer

onsemi

Introduction

The BC808-25LT1G is a PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of electronic applications.

Product Features and Performance

PNP bipolar transistor

Collector-Emitter Breakdown Voltage (VCEO) of 25V

Collector Current (IC) rating of 500mA

Power Dissipation of 300mW

Collector-Emitter Saturation Voltage (VCE(sat)) of 700mV @ 50mA, 500mA

DC Current Gain (hFE) of 160 min. @ 100mA, 1V

Transition Frequency (fT) of 100MHz

Product Advantages

Robust performance in a small surface-mount package

Suitable for a variety of analog and switching applications

Reliable and long-lasting operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 25V

Collector Current (IC): 500mA

Power Dissipation: 300mW

DC Current Gain (hFE): 160 min. @ 100mA, 1V

Transition Frequency (fT): 100MHz

Quality and Safety Features

Compliant with RoHS3 directive

Housed in a reliable SOT-23-3 (TO-236) package

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Analog and digital circuits

Switching and amplifier applications

Consumer electronics

Industrial control systems

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Robust performance in a compact package

Reliable and long-lasting operation

Suitable for a variety of electronic applications

Compliant with RoHS3 directive for environmental responsibility