BC807-25LT1 - onsemi

Manufacturer Part Number

BC807-25LT1

Manufacturer

onsemi

Introduction

The BC807-25LT1 is a PNP bipolar junction transistor (BJT) from onsemi, designed for general-purpose amplifier and switching applications.

Product Features and Performance

High current gain (hFE min. 160 @ 100mA, 1V)

High frequency transition (fT 100MHz)

Low collector-emitter saturation voltage (Vce(sat) max. 700mV @ 50mA, 500mA)

Low collector cutoff current (ICBO max. 100nA)

Low power dissipation (300mW max.)

Wide collector-emitter breakdown voltage (45V max.)

Product Advantages

Reliable performance in general-purpose amplifier and switching applications

Small surface-mount SOT-23-3 (TO-236) package

RoHS non-compliant

Key Technical Parameters

Transistor Type: PNP

Collector-Emitter Breakdown Voltage (Max): 45V

Collector Current (Max): 500mA

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage (Max): 700mV @ 50mA, 500mA

DC Current Gain (Min): 160 @ 100mA, 1V

Transition Frequency: 100MHz

Power Dissipation (Max): 300mW

Quality and Safety Features

Complies with RoHS directive (RoHS non-compliant)

Housed in a reliable SOT-23-3 (TO-236) surface-mount package

Compatibility

Compatible with a wide range of electronic circuits and devices that require a general-purpose PNP bipolar transistor

Application Areas

Amplifier circuits

Switching applications

General-purpose electronic devices

Product Lifecycle

Currently available from the manufacturer

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

Reliable and consistent performance in a wide range of applications

Small and compact surface-mount package

High current gain, high frequency, and low saturation voltage for efficient operation

RoHS non-compliant design for compatibility with legacy systems

Widely available and well-supported by the manufacturer