Manufacturer Part Number
BC640-016G
Manufacturer
onsemi
Introduction
The BC640-016G is a PNP bipolar junction transistor (BJT) from onsemi. It is a single transistor device packaged in the TO-92 (TO-226) enclosure.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Power rating: 625 mW
Collector-Emitter Breakdown Voltage (max): 80 V
Collector Current (max): 500 mA
Collector Cutoff Current (max): 100 nA (ICBO)
Collector-Emitter Saturation Voltage (max): 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (min): 100 @ 150 mA, 2 V
Transition Frequency: 150 MHz
Product Advantages
Wide operating temperature range
High power rating
High voltage and current capability
Low collector cutoff current
Good saturation characteristics
High current gain
High transition frequency
Key Technical Parameters
Transistor Type: PNP
Mounting Type: Through Hole
Package: TO-226-3, TO-92-3 Long Body
Quality and Safety Features
Robust TO-92 (TO-226) package
Suitable for high-reliability applications
Compatibility
Can be used as a replacement or alternative to similar PNP bipolar transistors in various electronic circuits and applications.
Application Areas
Amplifiers
Switches
Inverters
Power supplies
Motor controls
General-purpose electronics
Product Lifecycle
The BC640-016G is an active and widely available product from onsemi.
Replacement or upgrade options are likely available from onsemi or other transistor manufacturers.
Key Reasons to Choose This Product
Wide operating temperature range
High power and voltage/current capabilities
Good saturation and gain characteristics
High transition frequency
Robust and reliable TO-92 (TO-226) package
Widely used and available in the market