Manufacturer Part Number
BC547BTF
Manufacturer
onsemi
Introduction
General-purpose NPN bipolar junction transistor (BJT)
Product Features and Performance
Excellent electrical characteristics and high reliability
Suitable for a wide range of amplifier and switching applications
Product Advantages
High current gain
High transition frequency
Low collector-emitter saturation voltage
Low collector-emitter breakdown voltage
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 45V
Collector Current (Max): 100mA
DC Current Gain (hFE) (Min): 200 @ 2mA, 5V
Transition Frequency: 300MHz
Power Dissipation (Max): 500mW
Operating Temperature: -55°C to +150°C
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
Compatible with various electronic circuit designs
Application Areas
Amplifier circuits
Switching circuits
General-purpose electronic applications
Product Lifecycle
Currently in production
Replacement or upgrade options available if needed
Several Key Reasons to Choose This Product
Excellent electrical characteristics and reliability
Wide operating temperature range
Suitability for a variety of electronic applications
RoHS3 compliance for environmental responsibility
Availability of through-hole mounting options