BAW56M3T5G - onsemi

Manufacturer Part Number

BAW56M3T5G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Diode Rectifier Array

Product Features and Performance

5 A Reverse Leakage Current @ 70 V

25 V Forward Voltage @ 150 mA

Standard Technology

-55°C to 150°C Operating Temperature Range

6 ns Reverse Recovery Time

75 V DC Reverse Voltage

Small Signal up to 200 mA Current

200 mA Average Rectified Current per Diode

1 Pair Common Anode Diode Configuration

Product Advantages

Compact surface mount package

RoHS3 compliant

Key Technical Parameters

Manufacturer Part Number: BAW56M3T5G

Package: SOT-723

Current Reverse Leakage @ Vr: 2.5 A @ 70 V

Voltage Forward (Vf) (Max) @ If: 1.25 V @ 150 mA

Operating Temperature Junction: -55°C to 150°C

Reverse Recovery Time (trr): 6 ns

Voltage DC Reverse (Vr) (Max): 75 V

Current Average Rectified (Io) (per Diode): 200 mA (DC)

Diode Configuration: 1 Pair Common Anode

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

Discrete Semiconductor Applications

Rectifier Arrays

Product Lifecycle

Current product, no plans for discontinuation

Key Reasons to Choose This Product

Compact surface mount package

RoHS3 compliant

Wide temperature range (-55°C to 150°C)

Fast reverse recovery time (6 ns)

High reverse voltage (75 V) and current (2.5 A) capabilities

Suitable for small signal applications up to 200 mA