BAS21SLT1G - onsemi

Manufacturer Part Number

BAS21SLT1G

Manufacturer

onsemi

Introduction

The BAS21SLT1G is a high-speed silicon rectifier diode in a SOT-23-3 (TO-236) package.

Product Features and Performance

Fast recovery time of 50 ns

Low reverse leakage current of 100 nA at 200 V

Forward voltage of 1.25 V at 200 mA

Average rectified current of 225 mA (DC)

Operates at temperatures from -55°C to 150°C

Product Advantages

High-speed performance for efficient power conversion

Small and compact SOT-23-3 (TO-236) package

Robust design for reliable operation

Key Technical Parameters

Technology: Standard

Voltage DC Reverse (Vr) (Max): 250 V

Current Reverse Leakage @ Vr: 100 nA @ 200 V

Voltage Forward (Vf) (Max) @ If: 1.25 V @ 200 mA

Reverse Recovery Time (trr): 50 ns

Current Average Rectified (Io) (per Diode): 225 mA (DC)

Quality and Safety Features

RoHS3 compliant

Conforms to industry standards

Compatibility

Suitable for surface mount applications

Application Areas

Power supplies

Switching power supplies

Converters

Rectifiers

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High-speed performance for efficient power conversion

Small and compact package for space-constrained designs

Robust design for reliable operation in a wide temperature range

Compliance with industry standards for quality and safety