Manufacturer Part Number
ATP104-TL-H
Manufacturer
onsemi
Introduction
High-performance P-channel enhancement mode power MOSFET in the ATPAK package.
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Maximum Gate-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 8.4mΩ @ 38A, 10V
Continuous Drain Current (Id) of 75A at 25°C
Input Capacitance (Ciss) of 3950pF @ 10V
Power Dissipation (Ptot) of 60W at Tc
Product Advantages
Excellent power-handling capability
Ultra-low on-resistance for high efficiency
Compact ATPAK package
Key Technical Parameters
MOSFET technology
P-channel enhancement mode
Drive voltage range of 4.5V to 10V
Gate Charge (Qg) of 76nC @ 10V
Quality and Safety Features
Qualified to AEC-Q101 automotive standard
Designed for rugged and reliable performance
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching regulators
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Exceptional power-handling capability
Ultra-low on-resistance for high efficiency
Compact and reliable ATPAK package
Qualified to automotive standards for rugged performance
Versatile application range in power management and control systems
