Manufacturer Part Number
2SK4177-DL-1E
Manufacturer
onsemi
Introduction
The 2SK4177-DL-1E is a discrete semiconductor product, specifically a N-Channel MOSFET transistor.
Product Features and Performance
High drain-source breakdown voltage of 1500V
Low on-resistance of 13Ω @ 1A, 10V
Operating temperature up to 150°C
Continuous drain current of 2A at 25°C
Input capacitance of 380pF @ 30V
Power dissipation up to 80W
Product Advantages
Excellent high voltage and high power handling capabilities
Robust design for reliable operation in demanding applications
Surface mount package for efficient board-level integration
Key Technical Parameters
Drain to Source Voltage (Vdss): 1500V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 13Ω @ 1A, 10V
Continuous Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 380pF @ 30V
Power Dissipation (Tc): 80W
Quality and Safety Features
RoHS3 compliant
TO-263-2 package for efficient heat dissipation
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
Excellent high voltage and high power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for robust performance
Surface mount package for easy board-level integration
RoHS3 compliance for environmentally-friendly applications