2SK3703-1E - onsemi

Manufacturer Part Number

2SK3703-1E

Manufacturer

onsemi

Introduction

The 2SK3703-1E is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) discrete semiconductor product from onsemi.

Product Features and Performance

N-channel MOSFET design

60V drain-to-source voltage

±20V gate-to-source voltage

26mΩ maximum on-resistance at 15A, 10V

30A continuous drain current at 25°C ambient temperature

1780pF maximum input capacitance at 20V

2W maximum power dissipation at 25°C ambient, 25W at 25°C case temperature

40nC maximum gate charge at 10V

Product Advantages

High performance N-channel MOSFET

Low on-resistance for efficient power switching

High power handling capability

Suitable for a variety of power electronics applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 26mΩ @ 15A, 10V

Continuous Drain Current (Id): 30A @ 25°C

Input Capacitance (Ciss): 1780pF @ 20V

Power Dissipation (Pd): 2W @ 25°C, 25W @ 25°C case

Quality and Safety Features

RoHS3 compliant

TO-220F-3SG package

Suitable for through-hole mounting

Compatibility

This MOSFET is compatible with a wide range of power electronics and power conversion applications.

Application Areas

Switch-mode power supplies

Motor drives

Power inverters

Power amplifiers

Other power electronics applications

Product Lifecycle

The 2SK3703-1E is an active product and not nearing discontinuation. Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

High performance N-channel MOSFET with low on-resistance

Capable of handling high power and high current applications

Proven reliability and quality from onsemi

Suitable for a wide range of power electronics applications

RoHS3 compliance for environmentally-friendly use