2SK3666-2-TB-E - onsemi

Manufacturer Part Number

2SK3666-2-TB-E

Manufacturer

onsemi

Introduction

Junction Field Effect Transistor (JFET)

Product Features and Performance

Vgs(off) (V) = Gate-Source Cutoff Voltage

Id(off) (A) = Drain Cutoff Current

Vgss max (V) = Gate-Source Breakdown Voltage

Idss min (A) = Min Drain Current for Zero Gate Voltage

Low on-state resistance

High-speed switching capabilities

Product Advantages

Minimal gate drive requirements

Effective in high-impedance and high-bandwidth applications

Key Technical Parameters

Polarization type

Drain-source voltage

Gate-source voltage

Continuous drain current

Total device dissipation

Operating temperature range

Quality and Safety Features

ROHS compliant

High reliability and performance consistency

Protection against gate-source voltage peaks

Compatibility

Compatible with high-input impedance amplifiers

Dependent on application circuit characteristics

Application Areas

High impedance buffer stages

Analog switches

Choppers

Low noise pre-amps

Product Lifecycle

Discontinued

Potential availability of replacements or upgrades with newer models

Several Key Reasons to Choose This Product

Ideal for high-frequency applications

Suitable for audio amplification due to low noise

Long operational life with stable performance

Energy-efficient due to low on-state resistance

Economical for mass-market production due to simple gate-drive requirements