2SJ652-1E - onsemi

Manufacturer Part Number

2SJ652-1E

Manufacturer

onsemi

Introduction

P-Channel enhancement mode power MOSFET

Product Features and Performance

60V Drain-Source Voltage (Vdss)

28A Continuous Drain Current (Id) at 25°C

38mΩ On-State Resistance (Rds(on)) at 14A, 10V

4360pF Input Capacitance (Ciss) at 20V

2W Power Dissipation at Tc, 30W at Ta

80nC Gate Charge (Qg) at 10V

Product Advantages

Low on-state resistance for efficient power switching

High current handling capability

Suitable for various power conversion and control applications

Key Technical Parameters

Vdss: 60V

Vgs (Max): ±20V

Rds (on) (Max): 38mΩ @ 14A, 10V

Continuous Drain Current (Id): 28A @ 25°C

Input Capacitance (Ciss): 4360pF @ 20V

Power Dissipation: 2W @ Ta, 30W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-220-3 package for reliable through-hole mounting

Compatibility

Suitable for various power conversion and control applications

Application Areas

Switch-mode power supplies

Motor drives

Power amplifiers

Battery chargers

Industrial controls

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades may be available

Key Reasons to Choose This Product

Low on-state resistance for efficient power switching

High current handling capability

Suitable for a wide range of power conversion and control applications

Reliable through-hole mounting in a standard TO-220-3 package

RoHS3 compliance for environmental sustainability