Manufacturer Part Number
2SD1624T-TD-E
Manufacturer
onsemi
Introduction
The 2SD1624T-TD-E is a discrete NPN bipolar junction transistor (BJT) from onsemi, designed for a wide range of power amplification and switching applications.
Product Features and Performance
500 mW power dissipation rating
50 V collector-emitter breakdown voltage
3 A maximum collector current
200 minimum DC current gain (hFE) at 100 mA, 2 V
150 MHz transition frequency
Product Advantages
Compact surface mount package
Excellent high-frequency performance
Suitable for power amplification and switching applications
RoHS-compliant design
Key Technical Parameters
Power Dissipation: 500 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 3 A
DC Current Gain (hFE): 200 min. @ 100 mA, 2 V
Transition Frequency: 150 MHz
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (TO-243AA)
Compatibility
The 2SD1624T-TD-E is compatible with a wide range of electronic circuits and applications that require a high-performance NPN bipolar transistor.
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
Voltage regulators
Industrial control systems
Product Lifecycle
The 2SD1624T-TD-E is an active product and is not nearing discontinuation. Replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Excellent high-frequency performance for power amplification and switching applications
Compact surface mount package for efficient board space utilization
RoHS-compliant design for environmentally-conscious applications
Wide operating temperature range up to 150°C
Reliable and robust construction for industrial and commercial use
2SD1627 T100RLAPIS Technology