Manufacturer Part Number
2SC6082-1E
Manufacturer
onsemi
Introduction
High-power NPN silicon transistor with high collector current capability and high transition frequency.
Product Features and Performance
High collector current rating of up to 15A
High transition frequency of 195MHz
High DC current gain of at least 200 at typical operating conditions
Low collector-emitter saturation voltage of 400mV at 7.5A collector current
Power dissipation capability of up to 2W
Product Advantages
Suitable for high-current, high-frequency switching and amplifier applications
Robust design for reliable performance
Small package size enables compact circuit design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50V
Collector Cutoff Current: 10A
Collector-Emitter Saturation Voltage: 400mV
DC Current Gain: 200 minimum
Transition Frequency: 195MHz
Quality and Safety Features
RoHS3 compliant
Housed in compact TO-220 package for reliable thermal management
Compatibility
Through-hole mounting for easy integration into various circuit designs
Application Areas
Switching power supplies
Motor drives
Audio amplifiers
Industrial control systems
Product Lifecycle
This product is an active and widely available part in onsemi's portfolio.
Replacements and upgrades may be available as technology evolves.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Excellent high-frequency performance for efficient switching
Proven reliability and quality from a reputable manufacturer
Compatibility with common circuit design and assembly practices