Manufacturer Part Number
2SC5706-TL-E
Manufacturer
onsemi
Introduction
A high-performance NPN bipolar junction transistor (BJT)
Product Features and Performance
Capable of handling up to 800 mW of power
Breakdown voltage of up to 50 V between collector and emitter
Maximum collector current of 5 A
Saturation voltage as low as 240 mV at 100 mA and 2 A
Current gain (hFE) of at least 200 at 500 mA and 2 V
Transition frequency of 400 MHz
Product Advantages
Efficient power handling
High voltage and current capabilities
Low saturation voltage for improved efficiency
High current gain for amplification applications
High-frequency performance
Key Technical Parameters
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating temperature up to 150°C
RoHS3 compliant
Quality and Safety Features
Robust package design for reliable operation
Compliance with RoHS3 environmental regulations
Compatibility
Surface mount package for easy integration
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
Motor control
Industrial electronics
Product Lifecycle
Currently in active production
No plans for discontinuation, replacement or upgrade at this time
Key Reasons to Choose This Product
Excellent power handling and efficiency
High voltage and current capabilities
Low saturation voltage for improved performance
High current gain for amplification needs
High-frequency operation for versatile applications
Reliable and RoHS-compliant design
2SC5706-L-TL-LAMI Semiconductor/onsemi
2SC5707