Manufacturer Part Number
2SC5658M3T5G
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) in a single package.
Product Features and Performance
Operates at a maximum temperature of 150°C (TJ)
Maximum power handling of 260 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 100 mA
Collector cutoff current up to 500 nA (ICBO)
Collector-emitter saturation voltage up to 400 mV at 5 mA, 60 mA
Minimum DC current gain (hFE) of 120 at 1 mA, 6 V
Transition frequency of 180 MHz
Product Advantages
High-performance NPN BJT transistor
Compact surface mount package (SOT-723)
RoHS3 compliant
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400 mV @ 5 mA, 60 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1 mA, 6 V
Frequency Transition: 180 MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount (SOT-723) package
Application Areas
Suitable for use in various electronic circuits and applications that require a high-performance NPN BJT transistor.
Product Lifecycle
Current product, no information on discontinuation or upgrades.
Several Key Reasons to Choose This Product
High-performance NPN BJT transistor with excellent electrical characteristics
Compact surface mount package for efficient board space utilization
RoHS3 compliant for use in environmentally-conscious applications
Suitable for a wide range of electronic circuit designs and applications
2SC5658-RKEFAN