2SC5566-TD-E - onsemi

Manufacturer Part Number

2SC5566-TD-E

Manufacturer

onsemi

Introduction

The 2SC5566-TD-E is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications.

Product Features and Performance

Suitable for high-speed, high-current switching and amplifier circuits

Operates at high temperatures up to 150°C

High power rating of 1.3W

High collector-emitter breakdown voltage of 50V

High collector current rating of 4A

Fast transition frequency of 400MHz

High DC current gain of 200 minimum

Product Advantages

Excellent switching and amplifying capabilities

Reliable high-temperature operation

Compact surface mount package

RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 4A

DC Current Gain (hFE): 200 minimum

Transition Frequency (fT): 400MHz

Power Dissipation: 1.3W

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Can be used as a replacement or upgrade for various electronic applications that require a high-performance NPN BJT

Application Areas

High-speed switching circuits

Amplifier circuits

Power management circuits

Telecommunications equipment

Industrial control systems

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent high-power, high-speed performance

Reliable high-temperature operation

Compact and space-efficient surface mount package

RoHS3 compliance for environmental sustainability

Proven track record of reliability and durability