Manufacturer Part Number
2SC5226A-4-TL-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) RF
Product Features and Performance
RoHS3 Compliant
SC-70 / MCP3 package
Operating temperature up to 150°C
Power handling up to 150mW
Collector-Emitter Breakdown Voltage up to 10V
Collector Current up to 70mA
DC Current Gain of 90 minimum
Transition Frequency up to 7GHz
Gain of 12dB
Noise Figure of 1dB at 1GHz
Product Advantages
Compact surface mount package
High-frequency operation
High power handling capability
Wide temperature range
Key Technical Parameters
Package: SC-70, SOT-323
Package Type: Tape & Reel (TR)
Operating Temperature: 150°C (TJ) maximum
Power: 150mW maximum
Voltage Collector Emitter Breakdown: 10V maximum
Current Collector (Ic): 70mA maximum
Transistor Type: NPN
DC Current Gain (hFE): 90 minimum @ 20mA, 5V
Frequency Transition: 7GHz maximum
Gain: 12dB
Noise Figure: 1dB typical @ 1GHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
Application Areas
Radio Frequency (RF) circuits
Wireless communication systems
Power amplifiers
Switching circuits
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High-frequency operation up to 7GHz
High power handling up to 150mW
Wide operating temperature range up to 150°C
Compact surface mount package
RoHS3 compliant for environmental considerations
2SC5226-5NEC