2SB1202S-E - onsemi

Manufacturer Part Number

2SB1202S-E

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 1 W

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 3 A

Collector Cutoff Current (Max): 1 A

Saturation Voltage (Vce Sat): 700 mV @ 100 mA, 2 A

DC Current Gain (hFE): 140 min @ 100 mA, 2 V

Transition Frequency: 150 MHz

Product Advantages

Compact TO-251-3 Short Leads, IPak, TO-251AA package

Suitable for a variety of electronic circuit applications

Key Technical Parameters

RoHS Compliant

Operating Temperature: 150°C (TJ)

Mounting Type: Through Hole

Quality and Safety Features

Compliant with RoHS3 directive

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

Amplifiers

Switches

Power supplies

Audio equipment

Industrial controls

Product Lifecycle

Currently available

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Robust performance characteristics

Compact and efficient package

Broad compatibility and versatility

Compliance with industry standards