Manufacturer Part Number
2SB1202S-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Power Rating: 1 W
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 3 A
Collector Cutoff Current (Max): 1 A
Saturation Voltage (Vce Sat): 700 mV @ 100 mA, 2 A
DC Current Gain (hFE): 140 min @ 100 mA, 2 V
Transition Frequency: 150 MHz
Product Advantages
Compact TO-251-3 Short Leads, IPak, TO-251AA package
Suitable for a variety of electronic circuit applications
Key Technical Parameters
RoHS Compliant
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Quality and Safety Features
Compliant with RoHS3 directive
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Amplifiers
Switches
Power supplies
Audio equipment
Industrial controls
Product Lifecycle
Currently available
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Robust performance characteristics
Compact and efficient package
Broad compatibility and versatility
Compliance with industry standards
2SB1202SAMI Semiconductor/onsemi
2SB1202T