Manufacturer Part Number
2SB1124T-TD-E
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor transistor, specifically a PNP bipolar junction transistor (BJT).
Product Features and Performance
Operates at a maximum power of 500 mW
Supports a maximum collector-emitter voltage of 50V
Handles a maximum collector current of 3A
Features a minimum DC current gain (hFE) of 200 at 100mA and 2V
Has a transition frequency of 150MHz
Designed for surface mount applications
Product Advantages
Compact surface mount package
Capable of high-power and high-current operation
Delivers reliable performance across a wide temperature range
Key Technical Parameters
Package: TO-243AA
Operating Temperature: 150°C (TJ)
Collector-Emitter Saturation Voltage: 700mV @ 100mA, 2A
Collector Cutoff Current: 1A (ICBO)
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: Tape and Reel (TR)
Compatibility
This transistor is suitable for a variety of electronic circuit designs and applications.
Application Areas
Power amplifiers
Switches
Drivers
General-purpose amplification
Product Lifecycle
The 2SB1124T-TD-E is an actively produced and supported product. No information on discontinuation or availability of replacements/upgrades is currently known.
Key Reasons to Choose This Product
Robust performance in high-power, high-current applications
Compact surface mount package for efficient PCB integration
Reliable operation across a wide temperature range
RoHS3 compliance for environmentally-conscious design