Manufacturer Part Number
2SA2040-TL-E
Manufacturer
onsemi
Introduction
High performance, high current PNP bipolar junction transistor (BJT) in a TO-252-3 (DPak) package.
Product Features and Performance
High collector current capacity up to 8A
High frequency operation up to 290MHz
Low collector-emitter saturation voltage
High DC current gain of 200 minimum
Suitable for high-speed switching and amplifier applications
Product Advantages
Compact surface mount package
High power and high current handling
Excellent high frequency performance
Reliable and robust design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50V
Collector Current (IC): 8A
DC Current Gain (hFE): 200 minimum
Transition Frequency (fT): 290MHz
Power Dissipation (PD): 1W
Operating Temperature (TJ): 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Undergoes rigorous testing and quality control
Compatibility
Suitable for a wide range of high-power, high-speed electronic circuit applications
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
Motor drives
Telecommunications equipment
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Several Key Reasons to Choose This Product
High current and power handling capabilities
Excellent high frequency performance
Compact and reliable surface mount package
Proven reliability and quality from onsemi
Suitable for a wide range of high-power electronic applications
2SA2040-G-E MOS