2SA2029M3T5G - onsemi

Manufacturer Part Number

2SA2029M3T5G

Manufacturer

onsemi

Introduction

PNP Bipolar Junction Transistor (BJT)

Product Features and Performance

Operating Temperature: 150°C (TJ)

Power Max: 265 mW

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500pA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V

Frequency Transition: 140MHz

Product Advantages

Suitable for low-power, high-frequency applications

Robust design for reliable performance

Key Technical Parameters

Transistor Type: PNP

Mounting Type: Surface Mount

Package / Case: SOT-723

Supplier Device Package: SOT-723

Package: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Suitable for a wide range of electronic applications, such as amplifiers, switches, and low-power control circuits

Product Lifecycle

Currently available, no discontinuation information provided

Key Reasons to Choose This Product

Reliable performance in high-frequency and low-power applications

Robust design for consistent and stable operation

Compliance with RoHS regulations for environmentally friendly use

Compatibility with a variety of electronic circuits and systems