Manufacturer Part Number
2SA1774T1G
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a PNP bipolar junction transistor (BJT).
Product Features and Performance
High frequency operation up to 140 MHz
Low collector-emitter saturation voltage of 500 mV @ 5 mA, 50 mA
Low collector cutoff current of 500 nA
High DC current gain of 120 minimum @ 1 mA, 6 V
Compact surface mount package (SC-75, SOT-416)
Operating temperature up to 150°C
Product Advantages
Suitable for high-frequency analog and switching applications
Excellent electrical characteristics for efficient circuit performance
Small and space-saving surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V (max)
Collector Current: 100 mA (max)
Power Dissipation: 150 mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Can be used as a replacement or upgrade for similar PNP BJT transistors in various electronic circuits and devices.
Application Areas
High-frequency analog circuits
Switching applications
Audio amplifiers
Power supplies
General-purpose electronic circuits
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacement or upgraded devices may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent high-frequency performance up to 140 MHz
Low saturation voltage and collector cutoff current for efficient operation
High DC current gain for reliable amplification
Compact surface mount package for space-saving designs
RoHS compliance for use in modern electronic products
Proven reliability and performance from onsemi, a leading semiconductor manufacturer.