Manufacturer Part Number
2SA1419S-TD-E
Manufacturer
onsemi
Introduction
The 2SA1419S-TD-E is a PNP bipolar junction transistor (BJT) from onsemi, designed for a variety of electronic applications.
Product Features and Performance
Surface mount package (TO-243AA)
Power rating of 500 mW
Collector-emitter breakdown voltage of 160 V
Collector current rating of 1.5 A
Collector cutoff current of 1 A (ICBO)
Collector-emitter saturation voltage of 500 mV at 50 mA / 500 mA
DC current gain (hFE) of 100 at 100 mA / 5 V
Transition frequency of 120 MHz
Product Advantages
High voltage and current handling capabilities
Low saturation voltage for efficient performance
Surface mount packaging for compact designs
Reliable and robust construction
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 160 V
Current Collector (Ic) (Max): 1.5 A
Current Collector Cutoff (Max): 1 A (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 5 V
Frequency Transition: 120 MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
The 2SA1419S-TD-E is a direct replacement for the 2SA1419 transistor.
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
General purpose electronics
Product Lifecycle
The 2SA1419S-TD-E is an active product, and there are currently no plans for discontinuation. Replacement or upgrade options are available if needed.
Several Key Reasons to Choose This Product
High voltage and current handling capabilities for a wide range of applications
Low saturation voltage for efficient performance
Surface mount packaging for compact designs
Reliable and robust construction for long-term use
RoHS3 compliance for environmental responsibility
Direct replacement for the 2SA1419 transistor