Manufacturer Part Number
2SA1416S-TD-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-243AA Package
Surface Mount Mounting
Operating Temperature: 150°C (TJ)
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 100 V
Collector Current (Max): 1 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 400 mV @ 40 mA, 400 mA
DC Current Gain: 100 @ 100 mA, 5 V
Transition Frequency: 120 MHz
Product Advantages
Compact Surface Mount Package
High Power Handling Capability
Wide Operating Voltage Range
High Frequency Performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current (Max)
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
Driver circuits
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose
Compact and efficient surface mount package
High power handling and voltage capability
High frequency performance for various applications
RoHS3 compliance for environmental safety
2SA1413-Z-E1-AZRenesas Electronics Corporation