Manufacturer Part Number
2N7002WT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Product Features and Performance
60V drain-to-source voltage
6Ω maximum on-resistance
310mA continuous drain current
5pF maximum input capacitance
7nC maximum gate charge
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capability
Small surface mount package
Key Technical Parameters
Drain-to-source voltage: 60V
Gate-to-source voltage: ±20V
On-resistance: 1.6Ω
Drain current: 310mA
Input capacitance: 24.5pF
Power dissipation: 280mW
Quality and Safety Features
RoHS3 compliant
Operates in -55°C to 150°C temperature range
Compatibility
Suitable for surface mount applications
Application Areas
Power switching
Amplifier circuits
Driving inductive loads
Product Lifecycle
Current product, no discontinuation or obsolescence planned
Key Reasons to Choose This Product
Excellent power switching performance with low on-resistance
Small surface mount package for compact designs
Wide operating temperature range for reliable operation
RoHS compliance for use in environmentally-conscious applications