2N4401TFR - onsemi

Manufacturer Part Number

2N4401TFR

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

Small signal NPN transistor

Product Features and Performance

Designed for general-purpose amplifier and switching applications

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage (Vce(sat))

High current gain (hFE)

High transition frequency (fT)

Product Advantages

Reliable and stable performance

Compact through-hole package (TO-92)

Suitable for a variety of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Current (IC): 600mA

Power Dissipation (Pd): 625mW

Current Gain (hFE): Min. 100 @ 150mA, 1V

Transition Frequency (fT): 250MHz

Quality and Safety Features

RoHS3 compliant

Manufactured using high-quality materials and processes

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Audio circuits

Switching circuits

Low-power electronic devices

Product Lifecycle

This is an established and widely used transistor model

Replacement parts and upgrades are readily available

Key Reasons to Choose This Product

Reliable and stable performance

Compact and easy to integrate

Suitable for a wide range of applications

Readily available and well-supported