2N4401BU - onsemi

Manufacturer Part Number

2N4401BU

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

TO-92-3 Package

Operating Temperature: -55°C to 150°C

Power Rating: 625 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current (Max): 600 mA

Collector-Emitter Saturation Voltage: 750 mV @ 50 mA, 500 mA

DC Current Gain (hFE): 100 min @ 150 mA, 1 V

Transition Frequency: 250 MHz

Product Advantages

High-performance NPN bipolar transistor

Suitable for a wide range of applications

Reliable and robust design

Key Technical Parameters

Transistor Type: NPN

Package: TO-92-3, TO-226-3

Mounting Type: Through Hole

Quality and Safety Features

RoHS3 Compliant

Reliable and robust design

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Amplifiers

Switches

Drivers

Logic circuits

General-purpose electronics

Product Lifecycle

This product is actively supported and available for purchase.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High-performance NPN bipolar transistor

Suitable for a wide range of applications

Reliable and robust design

RoHS3 compliant

Actively supported and available for purchase