Manufacturer Part Number
2N3904BU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: -55°C to 150°C
Power Dissipation: 625 mW
Collector-Emitter Breakdown Voltage: 40 V
Collector Current: 200 mA
Collector-Emitter Saturation Voltage: 300 mV @ 5 mA, 50 mA
DC Current Gain: 100 @ 10 mA, 1 V
Transition Frequency: 300 MHz
Product Advantages
Reliable and durable performance
Compact and space-saving design
Versatile applications in electronic circuits
Key Technical Parameters
Transistor Type: NPN
Package: TO-92-3, TO-226-3
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 compliant for environmental safety
Robust and reliable construction
Compatibility
Widely compatible with various electronic systems and applications
Application Areas
Amplifiers
Switches
Inverters
Regulators
General-purpose electronic circuits
Product Lifecycle
Mature and established product
Ongoing availability and support from the manufacturer
Potential for future upgrades or replacements
Key Reasons to Choose This Product
Proven reliability and performance
Versatile applications across various electronic circuits
Compact and space-saving design
Compliance with RoHS3 environmental standards
Ongoing availability and support from the manufacturer