Manufacturer Part Number
1SV316-TB-E
Manufacturer
onsemi
Introduction
The 1SV316-TB-E is a high-performance radio frequency (RF) diode from onsemi. This diode is designed for use in a variety of RF applications, including mixers, detectors, switches, and limiters. With its excellent RF characteristics and reliable performance, the 1SV316-TB-E is a versatile component for RF circuit design.
Product Features and Performance
Operates at frequencies up to 12 GHz
Low junction capacitance of 0.35 pF
Low forward voltage drop of 0.55 V
High reverse breakdown voltage of 30 V
Fast switching speed with a typical reverse recovery time of 2 ns
Rugged construction for improved reliability and durability
Product Advantages
Suitable for a wide range of RF applications
Excellent RF performance for efficient circuit design
Reliable and durable construction for long-term use
Compact and space-saving package
Key Reasons to Choose This Product
High-frequency operation for advanced RF applications
Low capacitance and fast switching speed for efficient signal processing
Robust design for reliable performance in demanding environments
Versatile compatibility and easy integration into RF circuits
Quality and Safety Features
Manufactured in accordance with strict quality control standards
Compliant with industry safety regulations and environmental directives
Compatibility
The 1SV316-TB-E is a general-purpose RF diode that can be used in a variety of RF circuit designs. It is compatible with various electronic components and can be easily integrated into different RF systems.
Application Areas
Mixers
Detectors
Switches
Limiters
Other RF and microwave applications
Product Lifecycle
The 1SV316-TB-E is an active product in our website's sales team's portfolio. There are no immediate plans for product discontinuation. If customers require information about equivalent or alternative models, they are advised to contact our website's sales team.
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